| PART |
Description |
Maker |
| MAX2611 |
DC-to-Microwave, Low-Noise Amplifier
|
MAXIM - Dallas Semiconductor
|
| MAX2611 MAX2611EUS |
DC-to-Microwave Low-Noise Amplifier
DC-to-Microwave, Low-Noise Amplifier
DC-to-Microwave / Low-Noise Amplifier
|
MAXIM[Maxim Integrated Products]
Maixm
MAXIM - Dallas Semiconductor
|
| 2N2857 |
Silicon Bipolar Low Noise microwave Transistors
|
M-pulse Microwave Inc.
|
| MP4200135 MP42001 MP4200100 MP42001-509 |
Silicon Bipolar Low Noise Microwave Transistors
|
MPLUSE[M-pulse Microwave Inc.]
|
| MMBTSC3356 |
for microwave low noise amplifier at VHF, UHF and CATV band
|
TY Semiconductor Co., Ltd
|
| 2SC3604 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
|
NEC[NEC]
|
| 2SC3582 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
NEC[NEC]
|
| MP4T64533 |
Silicon Bipolar High fT Low Noise Microwave Transistors 硅双极高fT的微波低噪声晶体
|
M-Pulse Microwave, Inc.
|
| MGF1304A |
FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 2SC3356 |
NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold
|
California Eastern Labs
|
| MGF1305 |
From old datasheet system
FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
